SS16L RQG Tech Spezifikatioune
Taiwan Semiconductor Corporation - SS16L RQG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - SS16L RQG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 700 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | Sub SMA | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-219AB |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 400 µA @ 60 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | SS16 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation SS16L RQG.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | SS16L RQG | SS16L_R1_00001 | SS16HE3_B/I | SS16T3G |
| Hiersteller | Taiwan Semiconductor Corporation | Panjit International Inc. | Vishay General Semiconductor - Diodes Division | onsemi |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 400 µA @ 60 V | 100 µA @ 60 V | 200 µA @ 60 V | 200 µA @ 60 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 60 V | 60 V | 60 V |
| Voltage - Viru (Vf) (Max) @ Wann | 700 mV @ 1 A | 500 mV @ 1 A | 750 mV @ 1 A | 720 mV @ 1 A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Capacitance @ Vr, F. | - | - | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 125°C | -65°C ~ 150°C | -55°C ~ 150°C |
| Serie | - | - | Automotive, AEC-Q101 | - |
| Basis Produktnummer | SS16 | SS16 | SS16 | SS16 |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Supplier Device Package | Sub SMA | SMA (DO-214AC) | DO-214AC (SMA) | SMA |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package / Case | DO-219AB | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA |
Eroflueden SS16L RQG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir SS16L RQG - Taiwan Semiconductor Corporation.
SS16HE3-A/HElectro-Films (EFI) / VishaySS16R1JITSS16W T/RPANJITSS16L_R1_00001Panjit International Inc.DIODE SCHOTTKY 60V 1A SMASS16HE3_B/IVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 1A DO214ACSS16T3GonsemiDIODE SCHOTTKY 60V 1A SMA
SS16HM2GTSC (Taiwan Semiconductor)DIODE SCHOTTKY 60V 1A DO214AC
SS16M-07HRSGTaiwan SemiconductorSS16WT/RPANJITSS16HE3_B/HVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 1A DO214AC
SS16W_R1_00001Panjit International Inc.DIODE SCHOTTKY 60V 1A SMASS16T/RPANJITSS16HE3Electro-Films (EFI) / VishaySS16R3Taiwan SemiconductorSS16HE3/61TVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 1A DO214ACSS16HE3_A/HVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 1A DO214ACSS16L R3Taiwan SemiconductorSS16HE3-B/HElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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